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  q?v~zy??q?v?_rb]q??qcabfq ksx13003h series ksb13003h KSC13003H / ksu13003h npn silicon power transistor, vcbo= 900v, vceo= 530v, ic= 1.5a general description ? high voltage, high speed power switching ? suitable for electronic ballast up to 21w features ? vcbo = 900v ? vceo = 530v ? vbeo = 9v ? ic = 1.5a 1 2 3 ordering information ordering number package pin assignment packing 123 ksb13003h to-92 b c e ammo ksb13003hr to-92 e c b ammo KSC13003H to-126 b c e bulk ksu13003h to-251 b c e tube 1 2 3 1 2 3 to-92 to-126 to-251
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series ksb13003h KSC13003H / ksu13003h npn silicon power transistor, vcbo= 900v, vceo= 530v, ic= 1.5a characteristics symbol rating unit to-92 to-126 to-251 collector-base voltage v cbo 900 v collector-emitter voltage v ceo 530 v emitter-base voltage v ebo 9v collector current(dc) i c 1.5 a collector current(pulse) i cp 3a base current i b 0.75 a collector dissipation(tc=25 e ) p c 1.1 20 25 w junction temperature t j 150 e storage temperature t stg -65~150 e absolute maximum ratings tc=25 e unless otherwise noted electrical characteristics tc=25 e unless otherwise noted * pulse test: pulse width ?v'xw\&\foh? characteristics symbol test condition min typ. max unit collector-base breakdown voltage v cbo i c =500  a, i e =0 900 v collector-emitter breakdown voltage v ceo i c =10ma, i b =0 530 v emitter cut-off current i ebo v eb =9v,i c =0 1 ? *dc current gain h fe1 h fe2 h fe3 v ce =10v,i c =1ma v ce =10v,i c =0.4a v ce =10v,i c =1a 15 20 6 40 *collector-emitter saturation voltage v ce (sat) i c =1.0a,i b =0.25a 1.0 v *base-emitter saturation voltage v be (sat) i c =1.0a,i b =0.25a 1.5 v output capacitance c ob v cb =10v, f=0.1mhz 21 a current gain bandwidth product f t v ce =10v,i c =0.1a 4  turn on time t on vcc=125v, ic=2a i b1 =0.2a, i b2 = -0.2a r l =125  1.1  storage time t stg 4.0  fall time t f 0.7 
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series i c , collector current [a] v ce , collector-emitter voltage [v] i c , collector current [a] v ce (sat), saturation voltage [v] i c , collector current [a] v be (sat), saturation voltage[v] t s , switching time [v] i c , collector current [a] p c , collector power dissipation[w] t c , case temperature [ e ] i c , collector current [a] h fe , dc current gain figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. resistive load switching time figure 6. power derating typical characteristics 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 to-92
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series p c , collector power dissipation[w] t c , case temperature [ e ] figure 7. power derating typical characteristics 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 to-126 to-251(2)
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series 4.58 0.25 3.71 0.2 3 4 0.46 0.1 1.27typ 1.27typ 1.02 0.1 3.71 0.25 3.6 0.25 4.58 0.25 14.47 0.5 dimensions in millimeters { v t ` y g package dimension
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series h0 h h1 p p2 f1 f2 p1 d0 w1 w0 w2 w item symbol u???????q???? ???????? ???????? component pitch p bc_h a_f side lead to center of feed hole p1 d_if a_f center lead to center of feed hole p2 g_df a_f lead pitch fi,f2 c_f \a_c`^a_b carrier tape width w bi_a \b_a`^a_f adhesive tape width w0 g_a a_f tape feed hole location w1 j_a a_f adhesive tape position w2 b_aqq~r? t???q??q????q????q?q????q??q????????q h bj_f b t???q??q????q????q?q????q??? h0 bg_a a_f component height h1 ch_aq??? tape feed hole diameter d0 e_a a_c { v t ` y g { h w p u n g package dimension
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series { v t x y ] g package dimension
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series package dimension { v t y \ x g dimensions in millimeters
q?v~zy??q?v?_rb]q??qcabfq ksx13003h series package dimension { v t y \ x g z ? ? ? ? g s ? ? ? g dimensions in millimeters


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